This technique conditions the OBIC signal through a lock‐in amplifier significantly improving the signal‐to‐noise ratio and the overall detection capabilities of the system. This technique is capable of detecting microamps of leakage to isolate failure mechanisms in microelectronic devices and may be perform from the topside or through the backside of a device.

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Lock‐in Amplifier Augmented OBIC Low Power Optical Microscopy High Power Reflected Optical Microscopy Scanning Acoustic Microscopy (SAM) Photon Emission Microscopy Lock‐in Thermography Externally Induced Voltage Alteration (XIVA) Lock‐in Amplifier Augmented XIVA Soft Defect Localization (SDL) Laser Assisted Device Alteration (LADA) Area Defined Backside Preparation Area Defined Die Thinning Package Decapsulation Optical Beam Induced Current (OBIC) PCB Design and Layout